STP4NK60Z STMicroelectronics, STP4NK60Z Datasheet - Page 5

• Manufacturer Part Number: STP4NK60Z
• Description: MOSFET N-CH 600V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3191-5

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Table 7.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
Symbol
BV
I
Symbol
V
SDM
I
RRM
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
I
SD
Q
GSO
SD
t
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1 mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
I
I
V
(see
SD
SD
DD
= 4 A, V
= 4 A, di/dt = 100 A/µs
Test conditions
= 24 V, Tj = 150 °C
Figure
Test conditions
GS
19)
= 0
Electrical characteristics
Min.
Min.
30
1700
Typ.
400
8.5
Typ.
Max.
Max.
1.6
16
4
Unit
Unit
nC
ns
A
A
V
A
V
5/20