STP4NK60Z STMicroelectronics, STP4NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP4NK60Z
• Description: MOSFET N-CH 600V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3191-5

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
dv/dt
Symbol
ESD(G-S)
Symbol
R
I
R
P
DM
V
V
V
T
SD
E
thj-case
thj-amb
I
I
I
TOT
T
ISO
AR
DS
GS
stg
D
D
AS
T
j
(2)
l
(3)
≤ 4 A, di/dt ≤ 200 A/µs, V
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
Storage temperature
Max operating junction temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
C
= 25 °C)
J
= 25 °C, I
Parameter
DD
Parameter
C
≤ V
D
= 25 °C
=I
Parameter
GS
(BR)DSS
AR
= 0)
, V
DD
, T
C
C
= 25 °C
= 100 °C
= 50 V)
J
≤ T
JMAX.
DPAK-IPAK-I²PAK
TO-220 - D²PAK
TO-220
D²PAK
I²PAK
62.5
0.56
2.5
1.78
16
70
4
-
-55 to 150
DPAK
Value
Value
IPAK
3000
± 30
100
300
600
150
4.5
Value
120
Electrical ratings
4
TO-220FP
TO-220FP
2.5
16
2500
4
0.2
62.5
25
(1)
5
(1)
(1)
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
W
A
V
V
A
A
A
V
V
3/20