STB8NM60D STMicroelectronics, STB8NM60D Datasheet - Page 3

• Manufacturer Part Number: STB8NM60D
• Description: MOSFET N-CH 600V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5244-2

STB8NM60D - STP8NM60D
2
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
V
CASE
(BR)DSS
oss eq.
g
I
I
DS(on)
C
GS(th)
increases from 0 to 80% V
C
C
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate Body Leakage Current
(V
Gate Threshold Voltage
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Ouput
Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Rev2
I
V
V
V
V
V
V
I
V
V
V
V
(see Figure 13)
D
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 2.5A
= 250µA, V
= V
= 10V, I
=0, V
=400V, I
= Max Rating,
= Max Rating,Tc=125°C
=I
=25V, f=1 MHz, V
= ±30V, V
=10V
Test Condictions
Test Condictions
D(on)
GS
DS
, I
x R
D
D
D
=0V to 480V
=2.5A
= 250µA
GS
= 5A
DS
DS(on)max
= 0
= 0
GS
=0
Electrical characteristics
Min.
Min.
600
3
Typ.
Typ.
380
170
2.4
0.9
14
60
15
4
8
4
oss
Max.
Max.
±
when V
18
100
10
1
5
1
DS
Unit
Unit
nC
nC
nC
µA
µA
pF
pF
pF
pF
nA
Ω
S
V
V
3/13