STB8NM60D STMicroelectronics, STB8NM60D Datasheet - Page 2

• Manufacturer Part Number: STB8NM60D
• Description: MOSFET N-CH 600V 8A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 100000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5244-2

Electrical ratings
1
2/13
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
Symbol
Symbol
R
dv/dt
R
Symbol
V
I
I
P
DM
V
V
SD
thj-case
thj-amb
T
DGR
E
T
I
I
TOT
I
GS
stg
T
DS
D
D
AR
J
AS
(1)
≤5A, di/dt ≤400A/µs, V
l
(2)
Absolute maximum ratings
Thermal data
Avalanche data
Drain-Source Voltage (V
Drain-gate Voltage (R
Gate-Source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25°C, I
D
=I
DD
AR
Parameter
=80%V
Parameter
Parameter
, V
DD
C
GS
(BR)DSS
=50V)
= 25°C
GS
= 20kΩ)
Rev2
= 0)
C
C
=100°C
= 25°C
-65 to 150
Value
600
600
±30
100
0.8
Value
STB8NM60D - STP8NM60D
32
20
Value
1.25
62.5
8
5
300
200
2.5
W/°C
V/ns
Unit
°C/W
°C/W
Unit
°C
Unit
W
V
V
V
A
A
A
°C
mJ
A