STD100NH02LT4 STMicroelectronics, STD100NH02LT4 Datasheet - Page 3

• Manufacturer Part Number: STD100NH02LT4
• Description: MOSFET N-CH 24V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD100NH02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4100-2

STD100NH02L
1
Electrical ratings
Table 1.
1. Garanted when external Rg = 4.7 Ω and t
2.
3. Pulse width limited by safe operating area
4. Starting T
Table 2.
V
Symbol
Symbol
E
I
V
spike
P
R
I
I
DM
R
V
V
AS
T
D
D
DGR
T
TOT
Value limited by wire bonding.
thJC
thJA
T
GS
DS
stg
(2)
(2)
J
l
(3)
(4)
(1)
Drain-source voltage rating
Drain-source voltage (V
Drain-gate voltage (R
Drain-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
J
Absolute maximum ratings
Thermal data
= 25
o
C, I
D
= 30A, V
Parameter
Parameter
C
DD
GS
= 25°C
GS
= 15V
= 20KΩ)
= 0)
f
< t
C
C
=100°C
= 25°C
fmax
.
-55 to 175
Value
± 20
Value
0.67
240
100
800
30
24
24
60
60
100
275
1.5
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
mJ
°C
W
°C
V
V
V
V
A
A
A
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