STD100NH02LT4 STMicroelectronics, STD100NH02LT4 Datasheet - Page 14

• Manufacturer Part Number: STD100NH02LT4
• Description: MOSFET N-CH 24V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD100NH02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4100-2

Buck converter - power losses estimation
14/16
Table 7.
1. Dissipated by SW1 during turn-on
Table 8.
Pdiode
Pconduction
Parameter
Pswitching
Pconduction
Pswitching
Pgate(Q
Pdiode
Pgate
P
Q
Q
Qoss
P
gsth
d
gls
Qoss
Power losses calculation
Conductio
Recovery
Paramiters meaning
G
)
(1)
n
Duty-cycle
Post threshold gate charge
Third quadrant gate charge
On state losses
On-off transition losses
Conduction and reverse recovery diode losses
Gate drive losses
Output capacitance losses
V
in
*
High side switching (SW1)
(Q
gsth(SW1)
R
V
Q
DS(on)SW1
in
Not applicable
Not applicable
g(SW1)
*
Q
+
oss(SW1)
2
*
Q
V
I *
gd(SW1)
gg
2
L
f *
f *
*
δ
)
f *
Meaning
*
I
I
L
g
V
R
Low side switch (SW2)
Zero Voltage Switching
f(SW2)
DS(on)SW2
Q
V
V
in
in
gls(SW2)
*
*
I *
Q
Q
L
oss(SW2)
I *
rr(SW2)
2
t *
*
STD100NH02L
2
L
V
deadtime
*
gg
1 (
f *
f *
f *
−
f *
δ
)