STD90N03L STMicroelectronics, STD90N03L Datasheet - Page 5

• Manufacturer Part Number: STD90N03L
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N03L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 2805pF @ 25V
• Power - Max: 95W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7979-2; STD90N03L

STD90N03L - STD90N03L-1
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
V
(see Figure 15)
SD
SD
DD
=40A, V
=80A, di/dt = 100A/µs,
=19 V, Tj= 150°C
Test conditions
GS
=0
Electrical characteristics
Min.
Typ.
1.8
36
32
Max.
320
1.3
80
Unit
µC
ns
5/16
A
A
V
A