STD90N03L STMicroelectronics, STD90N03L Datasheet - Page 4

• Manufacturer Part Number: STD90N03L
• Description: MOSFET N-CH 30V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N03L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 2805pF @ 25V
• Power - Max: 95W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7979-2; STD90N03L

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
Table 5.
V
Symbol
Symbol
Symbol
R
V
CASE
(BR)DSS
I
I
t
t
DS(on)
C
GS(th)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
R
Q
oss
t
t
rss
iss
gs
gd
r
f
G
g
=25°C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 13)
f=1MHz Gate Bias
Bias=0 Test Signal
Level=20mV
open drain
V
R
(see Figure 12)
V
R
(see Figure 12)
D
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
DD
G
G
= 250µA, V
=4.7Ω, V
=4.7Ω, V
= V
= 10V, I
= 5V, I
=0
=15V, I
Test conditions
=15V, I
=15V, I
= 30V
= 30V, Tc=125°C
= ±20V
Test conditions
=25V, f=1MHz,
=5V
Test conditions
GS
, I
D
D
D
D
D
= 40A
D
=40A,
=40A,
GS
GS
= 40A
= 80A
GS
= 250µA
=5V
=5V
= 0
STD90N03L - STD90N03L-1
Min.
Min.
30
1
Min.
0.005
0.007
2805
Typ.
Typ.
549
1.2
76
22
10
7
Typ.
135
19
24
33
0.0057
0.0011
Max.
Max.
±
32
100
10
Max.
1
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
ns
ns
ns
ns
V
V
Ω
Ω