STS9NF30L STMicroelectronics, STS9NF30L Datasheet - Page 5

• Manufacturer Part Number: STS9NF30L
• Description: MOSFET N-CH 30V 9A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS9NF30L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 730pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3234-2

Normalized Gate Threshold Voltage vs Temperature
Source-drain Diode Forward Characteristics
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Thermal Impedance
Normalized Breakdown Voltage Temperature
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STS9NF30L
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