STS9NF30L STMicroelectronics, STS9NF30L Datasheet - Page 3

MOSFET N-CH 30V 9A 8-SOIC

STS9NF30L

Manufacturer Part Number
STS9NF30L
Description
MOSFET N-CH 30V 9A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS9NF30L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
730pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3234-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS9NF30L
Manufacturer:
ST
Quantity:
9 672
Part Number:
STS9NF30L
Manufacturer:
ST
0
Part Number:
STS9NF30L
Manufacturer:
ST
Quantity:
20 000
Part Number:
STS9NF30L/S9NF30L
Manufacturer:
ST
0
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 1)
V
(see test circuit, Figure 2)
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 3)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 9 A
= 9 A
= 24 V I
= 15 V
= 15 V
= 20 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 9 A V
Thermal Impedance
di/dt = 100A/µs
V
T
GS
j
V
= 150°C
V
GS
GS
= 0
GS
I
I
D
D
= 4.5 V
= 4.5 V
= 4.5 V
= 4.5 A
= 4.5 A
Min.
Min.
Min.
Typ.
Typ.
Typ.
9.5
1.6
15
80
38
24
38
30
3
4
Max.
Max.
Max.
12.5
1.5
STS9NF30L
36
9
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/8

Related parts for STS9NF30L