STD6NK50ZT4 STMicroelectronics, STD6NK50ZT4 Datasheet - Page 3

• Manufacturer Part Number: STD6NK50ZT4
• Description: MOSFET N-CH 500V 5.6A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD6NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 24.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.6A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.93ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.6 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6564-2; STD6NK50ZT4

ELECTRICAL CHARACTERISTICS (T
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
I
I
I
C
I
SD
GS(th)
DS(on)
C
C
d(on)
d(off)
Q
Q
fs
RRM
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
f
(1)
g
rr
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
I
V
(see test circuit, Figure 5)
D
V
SD
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
DD
G
DS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7
= 5.6 A, V
= 5.6 A, di/dt = 100 A/µs
= 5.6 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= V
= 8 V
= ± 20V
= 10V, I
= 0V, V
= 250 V, I
= 400V, I
= 10V
= 48V, T
= 48V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
GS
,
, I
I
V
D
DS
D
GS
D
GS
j
j
= 2.8 A
D
GS
D
= 25°C
= 150°C
= 2.8 A
= 50µA
= 0V to 400V
= 5.6 A,
= 0
= 10 V
= 2.8 A
STP6NK50Z - STF6NK50Z - STD6NK50Z
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
500
3
oss
when V
Typ.
3.75
0.93
Typ.
23.5
24.6
13.3
Typ.
690
100
254
360
4.3
4.9
1.2
1.9
20
52
12
31
23
10
11
DS
increases from 0 to 80%
Max.
Max.
Max.
22.4
±10
4.5
1.2
5.6
1.6
50
1
Unit
Unit
Unit
nC
nC
nC
µC
µC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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