STD6NK50ZT4 STMicroelectronics, STD6NK50ZT4 Datasheet - Page 2
![MOSFET N-CH 500V 5.6A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD6NK50ZT4
Manufacturer Part Number
STD6NK50ZT4
Description
MOSFET N-CH 500V 5.6A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD6NK50ZT4.pdf
(12 pages)
Specifications of STD6NK50ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
24.6nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
5.6A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.93ohm
Rds(on) Test Voltage Vgs
10V
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.6 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6564-2
STD6NK50ZT4
STD6NK50ZT4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD6NK50ZT4
Manufacturer:
STMicroelectronics
Quantity:
135
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
5.6A, di/dt
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
200 A/µs, V
Parameter
j
= 25 °C, I
DD
V
(BR)DSS
Parameter
Parameter
D
C
GS
= I
= 25°C
GS
j
= 20 k )
, T
max)
AR
Igs=± 1mA (Open Drain)
= 0)
j
, V
T
DD
JMAX.
Test Conditions
C
C
= 25°C
= 100°C
= 50 V)
Min.
STD6NK50Z
STP6NK50Z
30
TO-220
DPAK
22.4
0.72
1.38
5.6
3.5
90
-
Max Value
-55 to 150
Value
3000
± 30
62.5
500
500
300
180
4.5
5.6
Typ.
STF6NK50Z
TO-220FP
22.4 (*)
5.6 (*)
3.5 (*)
2500
0.2
25
5
Max.
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
V
A
A
A
V
V
A