IRF7821TRPBF International Rectifier, IRF7821TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7821TRPBF
• Description: MOSFET N-CH 30V 13.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7821TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1010pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7821PBFTR

Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
6
Fig 12. On-Resistance Vs. Gate Voltage
30
25
20
15
10
I
5
0
AS
2.0
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
t p
D.U.T
0.01 Ω
L
6.0
V
(BR)DSS
15V
T J = 125°C
T J = 25°C
8.0
DRIVER
I D = 13A
+
-
V DD
A
10.0
90%
100
V
10%
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
80
60
40
20
V
DS
0
GS
25
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
50
V
GS
t
Vs. Drain Current
f
V
DS
75
t
d(off)
100
D.U.T
L
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TOP
BOTTOM
D
t
V
r
DD
125
8.0A
10A
4.5A
I D
150