IRF7821TRPBF International Rectifier, IRF7821TRPBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRF7821TRPBF
Manufacturer Part Number
IRF7821TRPBF
Description
MOSFET N-CH 30V 13.6A 8-SOIC
Manufacturer
International Rectifier
Specifications of IRF7821TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.1 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1010pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.5 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13.6 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
9.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IRF7821TRPBF
Manufacturer:
International Rectifier
Part Number:
IRF7821TRPBF
Part Number:
IRF7821TRPBF
Part Number:
IRF7821TRPBF
Part Number:
IRF7821TRPBF
Applications
l
Benefits
l
l
l
l
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Notes through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
and Current
@ T
@ T
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Lead-Free
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
are on page 10
Parameter
Parameter
f
f
GS
fg
g
GS
GS
@ 10V
@ 10V
G
S
S
S
V
30V
DSS
1
2
3
4
Top View
Typ.
–––
–––
9.1mW@V
-55 to + 155
HEXFET Power MOSFET
8
7
6
5
IRF7821PbF
R
Max.
13.6
0.02
± 20
100
2.5
1.6
30
11
DS(on)
D
D
D
D
A
A
GS
Max.
max
20
50
= 10V
SO-8
Q
9.3nC
Units
Units
W/°C
°C/W
g
°C
05/23/07
W
(typ.)
V
A
1
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IRF7821TRPBF Summary of contents
Applications High Frequency Point-of-Load l Synchronous Buck Converter for Applications in Networking & Computing Systems. Lead-Free l Benefits Very Low DS(on) Low Gate Charge l Fully Characterized Avalanche Voltage l and Current Absolute Maximum Ratings ...
Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...
PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C 10 25°C 1 15V 20µs ...
0V MHZ C iss = SHORTED C rss = oss = Ciss 1000 Coss Crss 100 10 ...
Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ...
Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V V GS 0.01 Ω Fig 13a. Unclamped ...
D.U.T + • • - • + - • • • SD • Fig 15. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 16. Gate Charge ...
Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...
SO-8 Package Details Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...
SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...
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