IRF7821TRPBF International Rectifier, IRF7821TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7821TRPBF
• Description: MOSFET N-CH 30V 13.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7821TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1010pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13.6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7821PBFTR

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100.0
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
0.1
10
1
2.0
0.1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
3.0
T J = 25°C
1
2.5V
20µs PULSE WIDTH
Tj = 25°C
4.0
V DS = 15V
20µs PULSE WIDTH
10
5.0
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
100
6.0
100
2.0
1.5
1.0
0.5
10
Fig 2. Typical Output Characteristics
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
I D = 13A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Vs. Temperature
0
1
2.5V
20
20µs PULSE WIDTH
Tj = 150°C
40
60
80 100 120 140 160
10
TOP
BOTTOM 2.5V
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
3
100