IRF7413TRPBF International Rectifier, IRF7413TRPBF Datasheet - Page 4

MOSFET N-CH 30V 13A 8-SOIC

IRF7413TRPBF

Manufacturer Part Number
IRF7413TRPBF
Description
MOSFET N-CH 30V 13A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7413TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 7.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
79nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.011Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
13A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
18 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
44 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7413PBFTR

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100
3200
2800
2400
2000
1600
1200
10
800
400
1
0.4
0
1
C
C
C
V
V
iss
oss
rss
SD
DS
1.2
, Source-to-Drain Voltage (V)
V
C
C
C
T = 25°C
, Drain-to-Source Voltage (V)
J
GS
iss
rss
oss
= 0V,
= C
= C
= C
gs
ds
gd
2.0
+ C
+ C
10
T = 150°C
J
gd
gd
f = 1MHz
, C
ds
2.8
SHORTED
V
GS
= 0V
3.6
100
A
A
1000
20
16
12
100
8
4
0
10
1
0
0.1
I
D
T
T
Single Pulse
= 7.3A
C
J
= 25 C
= 150 C
10
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
V
V
30
DS
DS
DS(on)
= 24V
= 15V
FOR TEST CIRCUIT
SEE FIGURE 9
40
10
50
100us
1ms
10ms
4
60
100
A

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