IRF7413TRPBF International Rectifier, IRF7413TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7413TRPBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7413TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7413PBFTR

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Notes:
∆V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
R
V
g
I
I
Q
Q
Q
R
t
t
t
t
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
SD
g
gs
gd
rr
Symbol
(BR)DSS
Symbol
/∆T
Ω
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
™
…
†
ƒ
„
I
SD
θ
≤
≤
Min. Typ. Max. Units
Min
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
30
10
≤
0.034
1800
Typ
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
680
240
–––
–––
–––
200
≤
6.1
8.6
52
16
50
52
46
74
0.011
0.018
Max Units
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
110
300
3.0
9.2
3.7
3.1
1.0
12
25
79
23
58
V/°C
≤
≤
µA
nA
nC
nC
ns
pF
ns
Ω
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
G
= 7.3A
= 7.3A
= 25°C, I
= 25°C, I
= 6.2 Ω
= 2.0Ω, See Fig. 10
= V
= 10V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 6 and 9
= 15V
= 0V
GS
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
= 250µA
= 7.3A
= 7.3A, V
= 7.3A
= 3.7A
= 3.7A
= 0V
= 0V, T
e
D
f
f
= 1mA
J
GS
f
= 125°C
= 0V
f
e
2