IRF7413TRPBF International Rectifier, IRF7413TRPBF Datasheet

MOSFET N-CH 30V 13A 8-SOIC

IRF7413TRPBF

Manufacturer Part Number
IRF7413TRPBF
Description
MOSFET N-CH 30V 13A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7413TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 7.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
79nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.011Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
13A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
18 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
44 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7413PBFTR

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www.irf.com
l
l
l
l
l
l
l
l
l
Description
Symbol
V
V
I
I
I
P
E
dv/dt
T
R
R
Absolute Maximum Ratings
Thermal Resistance Ratings
D
D
DM
J,
DS
GS
D
AS
θJL
θJA
@ T
@ T
100% R
T
@T
STG
Symbol
A
A
A
= 25°C
= 70°C
= 25°C
G
Tested
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
g
e
GS
GS
@ 10V
@ 10V
d
G
S
S
S
1
2
3
4
Top View
Typ
–––
–––
8
7
6
5
-55 to +150
D
D
D
D
A
Max
A
0.02
± 20
260
9.2
2.5
5.0
30
13
58
SO-8
Max
20
50
mW/°C
Units
Units
°C/W
V/ns
mJ
°C
W
V
A
1

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IRF7413TRPBF Summary of contents

Page 1

R Tested G l Description Absolute Maximum Ratings Symbol V Drain-to-Source Voltage DS V Gate-to-Source Voltage GS Continuous Drain Current 25° Continuous Drain Current, ...

Page 2

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source ...

Page 3

PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 150° 25° 20µs PULSE WIDTH 1 3.0 3 Gate-to-Source ...

Page 4

1MHz iss gs gd 2800 rss iss oss ds gd 2400 C oss 2000 1600 1200 C rss ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω www.irf.com 600 15V 500 400 DRIVER 300 + - 200 100 V (BR)DSS 0 25 TOP BOTTOM 50 75 100 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • • Period D = P.W. Waveform SD Body Diode Forward ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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