IRF7413ZTRPBF International Rectifier, IRF7413ZTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7413ZTRPBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7413ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1210pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7413ZPBFTR; IRF7413ZTRPBF; IRF7413ZTRPBFTR

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V
V DS
GS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
t p
.3µF
0.01 Ω
L
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
-
V
+
-
DS
V DD
A
90%
140
120
100
V
10%
80
60
40
20
V
0
DS
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
GS
Fig 12c. Maximum Avalanche Energy
25
Starting T J , Junction Temperature (°C)
t
d(on)
50
Duty Factor < 0.1%
Pulse Width < 1µs
V
vs. Drain Current
GS
t
r
75
V
DS
t
100
d(off)
www.irf.com
D.U.T
L
t
D
f
125
V
DD
+
-
150