IRF7413ZTRPBF International Rectifier, IRF7413ZTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7413ZTRPBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7413ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1210pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7413ZPBFTR; IRF7413ZTRPBF; IRF7413ZTRPBFTR

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1000
1000
100
100
0.1
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
2
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
3
VGS
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
20µs PULSE WIDTH
Tj = 25°C
4
1
V DS = 10V
20µs PULSE WIDTH
T J = 150°C
2.5V
5
10
6
1000
100
10
2.0
1.5
1.0
0.5
1
Fig 2. Typical Output Characteristics
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I D = 13A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
0
20 40
20µs PULSE WIDTH
Tj = 150°C
1
60 80 100 120 140 160
2.5V
3
10