IRF7413ZTRPBF International Rectifier, IRF7413ZTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7413ZTRPBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7413ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1210pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7413ZPBFTR; IRF7413ZTRPBF; IRF7413ZTRPBFTR

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0.001
0.01
100
0.1
10
14
12
10
1
1E-006
8
6
4
2
0
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
D = 0.50
0.10
0.05
0.01
0.20
0.02
Ambient Temperature
T A , Ambient Temperature (°C)
50
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
Fig 10. Threshold Voltage vs. Temperature
i/Ri
2.5
2.0
1.5
1.0
0.5
R
1
R
1
-75
τ
2
R
τ
2
-50
2
R
2
0.1
I D = 250µA
-25
R
τ
3
3
R
T J , Temperature ( °C )
τ
3
3
1. Duty factor D =
2. Peak T
Notes:
0
τ
R
4
τ
4
R
4
J
25
1
4
= P
τ
C
τ
DM
Ri (°C/W) τi (sec)
50
x Z
1.8556
2.4927
25.570
20.340
t / t
1
thJA
P
2
75
DM
+ T
10
A
t
100
1
0.000337
0.012752
0.691000
21.90000
t
2
125
5
150
100