IRF7421D1TRPBF International Rectifier, IRF7421D1TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7421D1TRPBF
• Description: MOSFET N-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7421D1TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7421D1PBFTR; IRF7421D1TRPBF; IRF7421D1TRPBFTR

IRF7421D1PbF
4
Fig 7. Typical On-Resistance Vs. Gate
2.0
1.5
1.0
0.5
0.0
. 7
. 6
. 5
. 4
. 3
. 2
. 1
-60
3
I
Fig 5. Normalized On-Resistance
D
-40
= 4.1A
T , Junction Temperature (°C)
-20
J
5 , Gate-to-Source oltage ( )
Vs. Temperature
6
0
Voltage
20
I = 5.8
40
9
60
Power Mosfet Characteristics
80
100 120 140 160
12
V
GS
= 10V
15
A
Fig 6. Typical On-Resistance Vs. Drain
Fig 8. Maximum Safe Operating Area
100
0.1
10
1
.2
.1
.
0.1
T
T
Single Pulse
A
J
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
5
V
DS
, Drain-to-Source Voltage (V)
1
Current
1
, Drain Current (A)
VGS = 4.5V
BY R
15
VGS =10V
DS(on)
2
www.irf.com
10
25
100µs
1ms
10ms
3
100
35
A