IRF7421D1TRPBF International Rectifier, IRF7421D1TRPBF Datasheet

MOSFET N-CH 30V 5.8A 8-SOIC

IRF7421D1TRPBF

Manufacturer Part Number
IRF7421D1TRPBF
Description
MOSFET N-CH 30V 5.8A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7421D1TRPBF.pdf (8 pages)

Specifications of IRF7421D1TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
35 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7421D1PBFTR
IRF7421D1TRPBF
IRF7421D1TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7421D1TRPBF
Manufacturer:
SKYWORKS
Quantity:
5 567
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7421D1TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
The FETKY
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
À
Á
Â
Ã
www.irf.com
l
l
l
l
l
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Applications
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec
Co-packaged HEXFET
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Generation V Technology
SO-8 Footprint
Lead-Free
@ T
@ T
SD
T
@T
@T
STG
≤ 4.1A, di/dt ≤ 110A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
TM
family of co-packaged HEXFETs and Schottky diodes offer
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation Ã
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Junction-to-Ambient
DD
®
≤ V
Power
(BR)DSS
A
, T
= 25°C unless otherwise noted)
J
≤ 150°C
Ã
GS
G
A
S
S
@10VÃ
1
2
3
4
FETKY
Top View
IRF7421D1PbF
ä
8
7
6
5
MOSFET / Schottky Diode
-55 to +150
Maximum
D
D
D
D
A
A
± 20
-5.0
Maximum
5.8
4.6
2.0
1.3
46
16
62.5
Schottky Vf = 0.39V
R
DS(on)
V
DSS
SO-8
PD- 95304
= 0.035Ω
= 30V
Units
°C/W
Units
W/°C
V/ns
°C
W
A
V
1
10/13/04

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IRF7421D1TRPBF Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...

Page 2

IRF7421D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3. Drain-to-Source Voltage (V) DS 100 T = 25° 3.0 3.5 4.0 4 Gate-to-Source Voltage (V) GS ...

Page 4

IRF7421D1PbF 2 4.1A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature . 5.8 ...

Page 5

1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C rss 200 0 ...

Page 6

IRF7421D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteris- tics 150° ...

Page 7

SO-8 (Fetky) Package Outline 0.25 [.010 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: ...

Page 8

IRF7421D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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