IRF7421D1TRPBF International Rectifier, IRF7421D1TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7421D1TRPBF
• Description: MOSFET N-CH 30V 5.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7421D1TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 18 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7421D1PBFTR; IRF7421D1TRPBF; IRF7421D1TRPBFTR

IRF7421D1PbF
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
I
Parameter
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
Parameter
I
I
V
t
Q
DSS
GSS
d(on)
d(off)
f
S
SM
r
rr
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
SD
2
g
gs
gd
rss
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
4.6
—
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
J
= 25°C (unless otherwise specified)
0.026 0.035
0.040 0.060
57
93
510
200
—
—
—
5.9
6.7
2.2
18
27
20
16
84
—
—
—
—
—
—
—
-100
100
140
1.0
8.9
3.1
1.0
3.3
—
33
86
—
—
—
25
27
—
—
—
—
—
—
nA
µA
ns
nC
pF
nC
V
Ω
V
S
ns
A
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz (see figure 9)
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
Conditions
T
T
di/dt = 100A/µs Â
= 4.1A
= 4.1A
J
J
= 6.2Ω
= 3.7Ω Â
= V
= 15V, I
= 24V, V
= 24V, V
= 24V
= 0V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V (see figure 10) Â
= 15V
= 25°C, I
= 25°C, I
GS
Conditions
, I
D
D
D
D
= 250µA
D
GS
GS
S
F
= 250µA
= 2.1A
= 4.1A ƒ
= 2.1A ƒ
= 4.1A, V
= 4.1A
= 0V
= 0V, T
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J
GS
= 125°C
RRM
= 0V
2