PSMN6R0-30YL,115 NXP Semiconductors, PSMN6R0-30YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN6R0-30YL,115
• Description: MOSFET N-CH 30V 79A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 12V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 79 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4685-2; 934063076115; PSMN6R0-30YL T/R

NXP Semiconductors
PSMN6R0-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
10
I
10
(A)
10
D
I
100
10
D
-1
80
60
40
20
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
003aac631
mb
DS
1
/ I
(°C)
D
200
Rev. 04 — 10 March 2011
N-channel 30 V 6 mΩ logic level MOSFET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
DC
50
PSMN6R0-30YL
100
V
DS
(V)
100 μs
1 ms
10 μs
10 ms
100 ms
150
© NXP B.V. 2011. All rights reserved.
T
003aac633
mb
03aa16
(°C)
200
10
2
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