BUK92150-55A,118 NXP Semiconductors, BUK92150-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK92150-55A,118
• Description: MOSFET N-CH 55V 11A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK92150-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 338pF @ 25V
• Power - Max: 36W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4281-2; 934056250118; BUK92150-55A /T3

NXP Semiconductors
BUK92150-55A
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
10
D
10
10
−1
1
2
1
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
Rev. 05 — 24 March 2011
/ I
D
10
DC
V
DS
N-channel TrenchMOS logic level FET
(V)
BUK92150-55A
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
03nf47
10
2
© NXP B.V. 2011. All rights reserved.
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