BUK92150-55A,118 NXP Semiconductors, BUK92150-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK92150-55A,118
• Description: MOSFET N-CH 55V 11A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK92150-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 338pF @ 25V
• Power - Max: 36W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4281-2; 934056250118; BUK92150-55A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK92150-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK92150-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
Drain
source
mounting base; connected to
drain
Table 1.
Package
Name
DPAK
Symbol
Avalanches ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 24 March 2011
Simplified outline
Conditions
I
R
T
V
see
SOT428 (DPAK)
D
…continued
j(init)
GS
DS
GS
= 11 A; V
Figure 13
= 5 V; I
= 44 V; T
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
sup
D
3
= 5 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK92150-55A
mbb076
G
Min
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
2.6
Version
SOT428
Max Unit
16
-
2 of 14
mJ
nC