PMV31XN,215 NXP Semiconductors, PMV31XN,215 Datasheet - Page 9

• Manufacturer Part Number: PMV31XN,215
• Description: MOSFET N-CH 20V 5.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMV31XN,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 5.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 410pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.037 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.9 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2354-2; 934057678215; PMV31XN T/R; PMV31XN T/R

Philips Semiconductors
9. Package outline
Fig 14. SOT23.
9397 750 11066
Product data
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 01 — 26 February 2003
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
TrenchMOS™ extremely low level FET
H E
0.2
E
v
detail X
PROJECTION
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
0.1
EUROPEAN
w
L p
A
Q
PMV31XN
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
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