PMV31XN,215 NXP Semiconductors, PMV31XN,215 Datasheet

MOSFET N-CH 20V 5.9A SOT-23

PMV31XN,215

Manufacturer Part Number
PMV31XN,215
Description
MOSFET N-CH 20V 5.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMV31XN215.pdf (12 pages)

Specifications of PMV31XN,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
37 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.9A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
5.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
410pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.037 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2354-2
934057678215
PMV31XN T/R
PMV31XN T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV31XN in SOT23.
PMV31XN
Rev. 01 — 26 February 2003
TrenchMOS™ technology
Very fast switching
Low threshold voltage
Surface mount package.
Battery powered motor control
High-speed switch in set top box power supplies.
TrenchMOS™ extremely low level FET
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
MBB076
g
d
s
Product data

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PMV31XN,215 Summary of contents

Page 1

PMV31XN TrenchMOS™ extremely low level FET Rev. 01 — 26 February 2003 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV31XN in SOT23. 2. Features TrenchMOS™ technology Very fast switching Low threshold ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 7.1 Transient thermal impedance th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse 1 10 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 0.2 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2.5 ...

Page 7

Philips Semiconductors 2 V GS(th) (V) max 1.5 typ 1 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. (pF ...

Page 8

Philips Semiconductors ( 150 0 and 150 Fig 12. Source (diode forward) current as a ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030226 - Product data (9397 750 11066) 9397 750 11066 Product data TrenchMOS™ extremely low level FET Rev. 01 — 26 February 2003 PMV31XN © Koninklijke ...

Page 11

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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