PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet - Page 6

• Manufacturer Part Number: PMV65XP,215
• Description: MOSFET P-CH 20V 3.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of PMV65XP,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 76 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 950mV @ 1mA
• Gate Charge (qg) @ Vgs: 7.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 725pF @ 20V
• Power - Max: 1.92W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.076 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 1920 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.076Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2358-2; 934058736215; PMV65XP T/R

Philips Semiconductors
9397 750 13993
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
-I
-I
D
D
20
15
10
20
15
10
5
0
5
0
T
function of drain-source voltage; typical values.
T
function of gate-source voltage; typical values.
0
0
j
j
= 25 C
= 25 C and 150 C; V
T
j
= 150 C
0.5
1
25 C
1
2
DS
I
-4.5 V
D
x R
1.5
3
V
DSon
GS
-V
-3.5 V
03ar46
-V
03ar48
= -1.4 V
GS
DS
-2.5 V
-1.8 V
-1.6 V
(V)
-3 V
-2 V
(V)
Rev. 01 — 28 September 2004
4
2
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
P-channel TrenchMOS™ extremely low level FET
R
(m )
DSon
200
160
120
a
1.5
0.5
80
40
0
2
1
0
T
of drain current; typical values.
-60
factor as a function of junction temperature.
a
0
j
= 25 C
=
---------------------------- -
R
DSon 25 C
R
DSon
5
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
60
V
GS
= -2.5 V
PMV65XP
120
15
03ar47
-I
03aq10
T
D
j
-3.5 V
-4.5 V
-3 V
( C)
(A)
180
20
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