PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet - Page 4

• Manufacturer Part Number: PMV65XP,215
• Description: MOSFET P-CH 20V 3.9A SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of PMV65XP,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 76 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 950mV @ 1mA
• Gate Charge (qg) @ Vgs: 7.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 725pF @ 20V
• Power - Max: 1.92W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.076 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Power Dissipation: 1920 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.076Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2358-2; 934058736215; PMV65XP T/R

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13993
Product data sheet
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z
(K/W)
th(j-sp)
10
10
10
-1
2
1
10
thermal resistance from junction to solder point
-5
0.2
0.1
0.05
0.02
Thermal characteristics
0.5
5.1 Transient thermal impedance
single pulse
10
-4
10
-3
Rev. 01 — 28 September 2004
10
Conditions
Figure 4
-2
P-channel TrenchMOS™ extremely low level FET
10
-1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
1
Min
-
t
p
PMV65XP
t
p
T
(s)
Typ
-
03ar45
=
T
t
p
Max
65
t
10
4 of 12
Unit
K/W