BSH103,215 NXP Semiconductors, BSH103,215 Datasheet - Page 4

• Manufacturer Part Number: BSH103,215
• Description: MOSFET N-CH 30V 0.85A SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH103,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 400mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 83pF @ 24V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5013-2; 934054713215; BSH103 T/R; BSH103 T/R; BSH103,215

Philips Semiconductors
THERMAL CHARACTERISTICS
1998 Feb 11
handbook, full pagewidth
R
SYMBOL
th j-s
N-channel enhancement mode
MOS transistor
Fig.4
R th j-s
(K/W)
10
10
10
10
1
3
2
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
6
thermal resistance from junction to soldering point
0.75
0.33
0.05
0.02
0.01
= 1
0.5
0.2
0.1
10
0
5
10
PARAMETER
4
10
4
3
10
2
P
10
t p
VALUE
1
140
T
Product specification
t p (s)
=
t p
T
t
BSH103
MBK503
UNIT
1
K/W