BSH103,215 NXP Semiconductors, BSH103,215 Datasheet - Page 2

• Manufacturer Part Number: BSH103,215
• Description: MOSFET N-CH 30V 0.85A SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH103,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 400mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 83pF @ 24V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5013-2; 934054713215; BSH103 T/R; BSH103 T/R; BSH103,215

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
QUICK REFERENCE DATA
1998 Feb 11
V
V
V
V
I
R
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
Very low threshold
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL etc.
Power management
DC to DC converters
Battery powered applications
‘Glue-logic’; interface between logic blocks and/or
periphery
General purpose switch.
DS
SD
GS
GSth
tot
DSon
N-channel enhancement mode
MOS transistor
SYMBOL
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
PARAMETERS
CAUTION
V
V
T
V
T
2
s
s
GD
DS
GS
= 80 C
= 80 C
PINNING - SOT23
handbook, halfpage
= V
= 2.5 V; I
= 0; I
CONDITIONS
GS
PIN
Top view
S
1
2
3
; I
= 0.5 A
D
Fig.1 Simplified outline and symbol.
D
= 1 mA
1
= 0.5 A
SYMBOL
3
g
s
d
0.4
MIN.
2
gate
source
drain
MAM273
Product specification
30
1
0.85
0.5
0.5
8
DESCRIPTION
MAX.
g
BSH103
d
s
V
V
V
V
A
W
UNIT