BSH112,235 NXP Semiconductors, BSH112,235 Datasheet - Page 4

• Manufacturer Part Number: BSH112,235
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH112,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1768-2; 934056035235; BSH112 /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07305
Product specification
Symbol
R
R
th(j-sp)
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
thermal resistance from junction to ambient
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to solder point as a function of
Mounted on a metal clad substrate.
Z th(j-sp)
pulse duration.
(K/W)
10 3
10 2
10
1
10 -5
0.2
0.1
0.05
0.02
= 0.5
Rev. 01 — 25 August 2000
single pulse
10 -4
Conditions
mounted on a metal clad substrate;
Figure 4
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
10 -3
10 -2
10 -1
© Philips Electronics N.V. 2000. All rights reserved.
P
Value
150
350
1
t p
T
BSH112
t p (s)
=
03aa39
t p
T
t
Unit
K/W
K/W
10
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