BSH112,235 NXP Semiconductors, BSH112,235 Datasheet - Page 3

• Manufacturer Part Number: BSH112,235
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH112,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1768-2; 934056035235; BSH112 /T3

Philips Semiconductors
9397 750 07305
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
=
(%)
120
der
100
80
60
40
20
0
----------------------
P
tot 25 C
0
P
tot
DM
25
is single pulse.
100%
50
10 -2
(A)
10 -1
I D
10
1
1
75
T sp = 25 o C
100
125
T sp (
R DSon = V DS / I D
150
o
C)
03aa17
175
Rev. 01 — 25 August 2000
N-channel enhancement mode field-effect transistor
10
D.C.
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of solder point temperature.
(%)
=
I der
4.5 V
------------------ -
I
120
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
75
03aa40
© Philips Electronics N.V. 2000. All rights reserved.
10 2
100
125
T sp ( o C)
BSH112
150
03aa25
175
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