2N7002K,215 NXP Semiconductors, 2N7002K,215 Datasheet

MOSFET N-CH 60V 340MA SOT23

2N7002K,215

Manufacturer Part Number
2N7002K,215
Description
MOSFET N-CH 60V 340MA SOT23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.2N7002K215.pdf (12 pages)

Specifications of 2N7002K,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.9 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
340mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0039 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
0.34 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002K T/R
2N7002K T/R
2N7002K,215
568-4984-2
934057974215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N7002K,215
Manufacturer:
NXP Semiconductors
Quantity:
10 300
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D088
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
2N7002K
TrenchMOS™ logic level FET
Rev. 01 — 20 October 2003
Logic level compatible
Subminiature surface mount package
Relay driver
V
P
DS
tot
0.83 W
60 V
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
Very fast switching
Gate-source ESD protection diodes.
High speed line driver.
I
R
D
DSon
340 mA
3.9 .
g
d
s
Product data
03ab60

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2N7002K,215 Summary of contents

Page 1

TrenchMOS™ logic level FET Rev. 01 — 20 October 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level compatible Subminiature surface mount package 1.3 Applications ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name Description 2N7002K SOT23 Plastic surface mounted package; 3 leads. 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature. 1 Limit R ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) 5.1 Transient thermal impedance th(j-sp) (K/ ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V drain-source breakdown voltage (BR)GSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I ...

Page 6

Philips Semiconductors 0 10V (A) 0.4 0.3 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; ...

Page 7

Philips Semiconductors 2.4 V GS(th) typ (V) 1.8 1.2 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. (pF ...

Page 8

Philips Semiconductors 0 (A) 0.4 0.3 0.2 150 C 0 0.3 0 and 150 Fig 12. Source (diode forward) current ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20031020 Product data (9397 750 11703) 9397 750 11703 Product data Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET © Koninklijke Philips Electronics ...

Page 11

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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