SI4418DY-T1-E3 Vishay, SI4418DY-T1-E3 Datasheet - Page 8
![MOSFET N-CH 200V 2.3A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4418DY-T1-E3
Manufacturer Part Number
SI4418DY-T1-E3
Description
MOSFET N-CH 200V 2.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4418DY-T1-E3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
142mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4418DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08