SI4418DY-T1-E3 Vishay, SI4418DY-T1-E3 Datasheet - Page 2

MOSFET N-CH 200V 2.3A 8-SOIC

SI4418DY-T1-E3

Manufacturer Part Number
SI4418DY-T1-E3
Description
MOSFET N-CH 200V 2.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4418DY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
142mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4418DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4418DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
12
10
8
6
4
2
0
0
1
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
V
GS
2
a
= 10 V thru 6 V
Symbol
R
3
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
SD
t
rr
gd
fs
gs
r
f
g
g
4
5 V
4 V
V
V
DS
I
DS
D
I
≅ 1 A, V
= 200 V, V
F
V
V
= 100 V, V
V
V
V
5
V
DD
= 2.1 A, dI/dt = 100 A/µs
DS
I
DS
DS
V
V
GS
S
DS
Test Conditions
GS
DS
= 2.1 A, V
= 100 V, R
= 0 V, V
= V
= 200 V, V
= 6.0 V, I
≥ 5 V, V
= 10 V, I
= 15 V, I
GEN
f = 1 MHz
GS
GS
GS
, I
= 10 V, R
GS
D
= 0 V, T
GS
= 10 V, I
GS
D
= 250 µA
D
D
L
GS
= ± 20 V
= 2.8 A
= 10 V
= 100 Ω
= 3 A
= 3 A
= 0 V
= 0 V
J
g
= 85 °C
D
= 6 Ω
= 3 A
12
10
8
6
4
2
0
0
1
Min.
V
12
2
1
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
2
0.110
0.120
Typ.
0.8
4.5
6.5
13
20
15
15
40
20
70
2
S09-0322-Rev. D, 02-Mar-09
T
3
25 °C
C
Document Number: 72513
= 125 °C
± 100
0.130
0.142
Max.
4
110
1.2
3.4
20
30
25
25
60
30
4
1
5
- 55 °C
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
6

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