SI4418DY-T1-E3 Vishay, SI4418DY-T1-E3 Datasheet

MOSFET N-CH 200V 2.3A 8-SOIC

SI4418DY-T1-E3

Manufacturer Part Number
SI4418DY-T1-E3
Description
MOSFET N-CH 200V 2.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI4418DY-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
142mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4418DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY
Quantity:
10 000
Part Number:
SI4418DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72513
S09-0322-Rev. D, 02-Mar-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
200
DS
(V)
G
S
S
S
1
2
3
4
Top View
Si4418DY-T1-E3 (Lead (Pb)-free)
Si4418DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.142 at V
0.130 at V
SO-8
R
DS(on)
J
a
= 150 °C)
GS
GS
a
(Ω)
8
7
6
5
= 6.0 V
= 10 V
N-Channel 200-V (D-S) MOSFET
D
D
D
D
a
a
A
I
= 25 °C, unless otherwise noted
D
2.8
3
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Primary Side Switch
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
AS
I
thJA
thJF
GS
DS
AS
D
S
D
stg
g
G
Tested
®
N-Channel MOSFET
Power MOSFET
Typical
10 s
2.1
2.1
2.5
1.3
36
71
15
3
D
S
- 55 to 150
± 20
200
1.8
12
6
Steady State
Maximum
1.25
2.3
1.6
1.5
0.8
50
85
20
Vishay Siliconix
Si4418DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI4418DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4418DY-T1-E3 (Lead (Pb)-free) Si4418DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) ...

Page 2

... Si4418DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72513 S09-0322-Rev. D, 02-Mar- °C J 0.8 1.0 1.2 Si4418DY Vishay Siliconix 1600 1400 1200 C iss 1000 800 600 400 C rss C 200 oss Drain-to-Source Voltage (V) DS Capacitance 2 ...

Page 4

... Si4418DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72513. Document Number: 72513 S09-0322-Rev. D, 02-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4418DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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