SUD50N04-8M8P-4GE3 Vishay, SUD50N04-8M8P-4GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N04-8M8P-4GE3
• Description: MOSFET N-CH 40V 50A TO-252
• Manufacturer: Vishay

Specifications of SUD50N04-8M8P-4GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 20V
• Power - Max: 48.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 6.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD50N04-8M8P-4GE3TR; SUD50N04-8M8P-GE3TR; SUD50N04-8M8P-GE3TR

SUD50N04-8m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.030
0.025
0.020
0.015
0.010
0.005
500
400
300
200
100
2.0
1.7
1.4
1.1
0.8
0.5
0.0001
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
On-Resistance vs. Junction Temperature
- 25
= 20 A
Single Pulse, Junction-to-Ambient
0.001
2
V
GS
T
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
0.01
4
Time (s)
50
T
T
J
J
= 25 °C
0.1
= 125 °C
6
75
V
100
I
GS
D
T
A
V
= 7.2 A
8
1
GS
= 10 V
= 25 °C
125
= 4.5 V
150
10
10
0.001
1000
- 0.2
- 0.6
- 1.0
0.01
0.01
100
100
0.6
0.2
0.1
0.1
10
10
- 50
1
1
0.0
0.1
Limited by R
* V
- 25
Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Voltage
GS
Single Pulse
0.2
T
T
C
> minimum V
J
V
= 150 °C
= 25 °C
SD
V
0
DS
- Source-to-Drain Voltage (V)
Threshold Voltage
DS(on)
T
0.4
- Drain-to-Source Voltage (V)
J
1
25
- Temperature (°C)
T
*
J
GS
= 25 °C
0.6
at which R
50
S10-0109-Rev. B, 18-Jan-10
Document Number: 68647
75
BVDSS
0.8
10
DS(on)
I
D
T
J
100
= 250 µA
= - 55 °C
is specified
I
1.0
D
125
= 1 mA
10 µs
100 µs
1 ms
10 ms,
100 ms, DC
100
150
1.2