SUD50N04-37P Vishay, SUD50N04-37P Datasheet

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SUD50N04-37P

Manufacturer Part Number
SUD50N04-37P
Description
N-Channel 40-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 69732
S-80109-Rev. B, 21-Jan-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
40
(V)
SUD50N04-37P-E3 (Lead (Pb)-free)
Ordering Information:
0.046 at V
0.037 at V
G
Top View
TO-252
r
D
DS(on)
S
GS
GS
J
(Ω)
= 4.5 V
= 150 °C)
= 10 V
b
Drain Connected to Tab
N-Channel 40-V (D-S) MOSFET
I
D
(A)
8
8
a
A
= 25 °C, unless otherwise noted
Q
Steady State
Steady State
5.3 nC
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
®
Power MOSFET
Typical
9.4
49
G
N-Channel MOSFET
- 55 to 150
Limit
± 20
2.45
10.8
5.4
4.4
1.6
2.0
1.3
6.9
40
8
8
30
8
7
a
a
a
b
b
b
b
b
D
S
SUD50N04-37P
Maximum
www.DataSheet4U.com
11.5
60
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

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SUD50N04-37P Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N04-37P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SUD50N04-37P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-80109-Rev. B, 21-Jan-08 New Product = 10 thru 1.5 2.0 2.5 800 640 480 320 160 1.8 1.6 1 1.2 DS 1.0 0.8 0.6 7.5 10.0 12.5 SUD50N04-37P www.DataSheet4U.com Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss ...

Page 4

... SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µ 0 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 100 0.001 0.01 Time (s) Single Pulse Power, Junction-to-Case www ...

Page 5

... The power dissipation P junction-to-case thermal resistance, and is more useful in settling the 125 150 upper dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. SUD50N04-37P www.DataSheet4U.com Vishay Siliconix 100 ...

Page 6

... SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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