SI1499DH-T1-E3 Vishay, SI1499DH-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1499DH-T1-E3
• Description: MOSFET P-CH 8V 1.6A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1499DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 4V
• Power - Max: 2.78W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.6A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 424mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -800mV
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.078 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1499DH-T1-E3TR

Document Number: 71154
06-Jul-01
6
1
e
e
D
5
2
1
b
4
3
-A-
E
-B-
A
A
1
2
1
E
A
c
L
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
Dim
A
A
E
e
A
D
b
E
L
c
e
1
1
1
2
Min
0.90
0.80
0.15
0.10
1.80
1.80
1.15
1.20
0.10
–
Package Information
0.65BSC
7_Nom
Nom
2.00
2.10
1.25
1.30
0.20
–
–
–
–
–
Max
1.10
0.10
1.00
0.30
0.25
2.20
2.40
1.35
1.40
0.30
Vishay Siliconix
0.035
0.031
0.006
0.004
0.071
0.071
0.045
0.047
0.004
Min
–
0.026BSC
7_Nom
Nom
0.079
0.083
0.049
0.051
0.008
www.vishay.com
–
–
–
–
–
Max
0.043
0.004
0.039
0.012
0.010
0.087
0.094
0.053
0.055
0.012
1