SI1499DH-T1-E3 Vishay, SI1499DH-T1-E3 Datasheet
SI1499DH-T1-E3
Specifications of SI1499DH-T1-E3
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SI1499DH-T1-E3 Summary of contents
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... D Marking Code Top View Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free) Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current a, b Maximum Power Dissipation ...
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... Si1499DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 73338 S10-0792-Rev. F, 05-Apr- thru 1 1.5 2 Si1499DH Vishay Siliconix ° °C 6 125 ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) ...
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... Si1499DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 ...
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... It is used to determine the current rating, when this rating falls below the package limit Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1499DH Vishay Siliconix is based 150 °C, using D J(max) Notes ...
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... E 1.80 2.10 E 1.15 1. 0.65BSC e 1.20 1. 0.10 0.20 L 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 Vishay Siliconix Min Nom Max 1.10 0.035 – 0.043 0.10 – – 0.004 1.00 0.031 – 0.039 0.30 0.006 – 0.012 0.25 0.004 – 0.010 2 ...
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... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the basic pad layout and dimensions. These pad patterns are sufficient for the low to medium power applications for which this package is intended ...
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... AN815 Vishay Siliconix Front of Board SC70-6 THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (Package Performance) The junction to foot thermal resistance is a useful method of comparing different packages thermal performance. A helpful way of presenting the thermal performance of the 6-Pin SC-70 copper leadframe device is to compare it to the traditional Alloy 42 version ...
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... Alloy 42 160 Time (Secs) FIGURE 4. Leadframe Comparison on EVB Document Number: 71334 12-Dec-03 250 200 150 100 Copper 100 1000 10 FIGURE 5. AN815 Vishay Siliconix Alloy 42 Copper - 100 Time (Secs) Leadframe Comparison on Alloy 42 1-inch www.vishay.com 1000 2 PCB 3 ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...