SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 4
![MOSFET N-CH 20V 400MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1300BDL-T1-E3
Manufacturer Part Number
SI1300BDL-T1-E3
Description
MOSFET N-CH 20V 400MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1300BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
850 mOhm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.84nC @ 4.5V
Input Capacitance (ciss) @ Vds
35pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.37 A
Power Dissipation
190 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
320mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.08ohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1300BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1300BDL-T1-E3
Manufacturer:
Cortina
Quantity:
186
Part Number:
SI1300BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.vishay.com
4
Si1300BDL
Vishay Siliconix
0.001
10.0
0.01
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.1
0.0
–50
–25
Forward Diode Voltage vs. Temp
V
0.3
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature (_C)
25
0.6
T
J
= 150 _C
50
I
D
0.9
= 250 mA
75
100
T
1.2
0.001
J
0.01
_
= 25 _C
0.1
10
125
1
0.1
*V
*Limited by r
150
1.5
GS
T
Single Pulse
New Product
A
u minimum V
= 25
V
DS
– Drain-to-Source Voltage (V)
Safe Operating Area
_C
DS(on)
1
GS
BV
at which r
DSS
Limited
5.0
4.0
3.0
2.0
1.0
0.0
DS(on)
10
10
2
0.001
8
6
4
0
0
is specified
Single Pulse Power, Junction-to-Ambient
10 ms
100 m
1 s,
10 s,
100 s
1 ms
10 ms, 100 ms
0.01
r
DS(on)
V
1
GS
100
– Gate-to-Source Voltage (V)
0.1
vs VGS vs Temperature
T
A
= 25 _C
2
Time (sec)
T
A
1
= 25 _C
S–52388—Rev. A, 21–Nov–05
T
Document Number: 73557
3
A
= 125 _C
10
4
100
1000
5