SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet

MOSFET N-CH 20V 400MA SOT323-3

SI1300BDL-T1-E3

Manufacturer Part Number
SI1300BDL-T1-E3
Description
MOSFET N-CH 20V 400MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI1300BDL-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
850 mOhm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.84nC @ 4.5V
Input Capacitance (ciss) @ Vds
35pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.37 A
Power Dissipation
190 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
320mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.08ohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1300BDL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1300BDL-T1-E3
Manufacturer:
Cortina
Quantity:
186
Part Number:
SI1300BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1300BDL-T1-E3
Quantity:
70 000
Notes:
a.
b.
c.
d.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Based on T
Surface mounted on 1” x 1” FR4 board.
t = 5 sec
Maximum under steady state conditions is 360 _C/W.
DS
20
20
(V)
C
Ordering Information: Si1300BDL–T1–E3
= 25 _C.
0.85 at V
1.08 at V
G
S
r
DS(on)
1
2
J
SC-70 (3-LEADS)
GS
GS
= 150 _C)
b, d
150 _C)
Parameter
Parameter
= 4.5 V
= 2.5 V
(W)
Top View
N-Channel 20-V (D-S) MOSFET
I
3
D
0.35
0.4
(A)
D
a
Steady State
Q
T
T
T
T
T
T
T
T
T
T
t p 5 sec
A
A
A
A
A
C
C
C
C
C
g
New Product
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
335
335
(Typ)
Marking Code
_
KE
XX
Part # Code
Symbol
Symbol
T
R
R
J
V
V
I
P
P
, T
Lot Traceability
and Date Code
DM
I
I
I
I
thJA
thJF
DS
GS
D
D TrenchFETr Power MOSFET
D 100 % R
S
D
stg
g
Typical
Tested
540
450
–55 to 150
0.37
0.30
0.14
0.12
Limit
0.32
0.18
0.14
0.19
"8
0.4
0.5
0.2
20
b, c
b, c
b, c
b, c
G
Maximum
N-Channel MOSFET
Vishay Siliconix
670
570
Si1300BDL
D
S
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
RoHS
V
V
A
1

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SI1300BDL-T1-E3 Summary of contents

Page 1

... 1. 2 SC-70 (3-LEADS Top View Ordering Information: Si1300BDL–T1–E3 Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) 150 _C) Continuous Drain Current (T Continuous Drain Current (T J Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si1300BDL Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 73557 S–52388—Rev. A, 21–Nov–05 New Product 1.0 V 2.0 2.5 3.0 1.00 1. 450 600 Si1300BDL Vishay Siliconix Transfer Characteristics curves vs. Temp 0.8 0.6 0 0.2 = 125 – 0.0 0.0 0.5 1.0 1.5 V – ...

Page 4

... Si1300BDL Vishay Siliconix Forward Diode Voltage vs. Temp 10.0 1.0 = 150 0.1 0.01 0.001 0.0 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0.9 0.8 = 250 0.7 0.6 0.5 0.4 0.3 0.2 –50 – – Temperature (_C) J www.vishay.com 4 New Product ...

Page 5

... S–52388—Rev. A, 21–Nov–05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si1300BDL Vishay Siliconix Notes Duty Cycle 360 _C/W 2 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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