SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet

MOSFET N-CH 20V 400MA SOT323-3

SI1300BDL-T1-E3

Manufacturer Part Number
SI1300BDL-T1-E3
Description
MOSFET N-CH 20V 400MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI1300BDL-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
850 mOhm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.84nC @ 4.5V
Input Capacitance (ciss) @ Vds
35pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.37 A
Power Dissipation
190 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
320mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.08ohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1300BDL-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1300BDL-T1-E3
Manufacturer:
Cortina
Quantity:
186
Part Number:
SI1300BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1300BDL-T1-E3
Quantity:
70 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 360 °C/W.
Document Number: 73557
S10-2139-Rev. C, 20-Sep-10
G
Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
S
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
1
2
(V)
SC-70 (3-LEADS)
Top View
C
= 25 °C.
0.85 at V
1.08 at V
R
Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
3
GS
GS
D
()
= 4.5 V
= 2.5 V
J
= 150 °C)
b, d
N-Channel 20 V (D-S) MOSFET
Marking Code
KE
XX
I
Part # Code
D
0.35
0.4
(A)
a
Lot Traceability
and Date Code
A
Q
= 25 °C, unless otherwise noted)
Steady State
g
0.335
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t  5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
540
450
G
N-Channel MOSFET
- 55 to 150
0.37
0.30
0.14
0.12
Limit
0.32
0.18
0.14
0.19
± 8
0.4
0.5
0.2
20
b, c
b, c
b, c
b, c
D
S
Maximum
670
570
Vishay Siliconix
Si1300BDL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1300BDL-T1-E3 Summary of contents

Page 1

... V GS SC-70 (3-LEADS Marking Code Top View Ordering Information: Si1300BDL-T1-E3 (Lead (Pb)-free) Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1300BDL Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Total Gate Charge (pC) g Gate Charge Document Number: 73557 S10-2139-Rev. C, 20-Sep- thru 2.0 2.5 3.0 0.75 1.00 1. 450 600 Si1300BDL Vishay Siliconix 0.8 0.6 0.4 0 ° 125 ° °C A 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temperature ...

Page 4

... Si1300BDL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 °C J 0.1 0.01 0.001 0.0 0.3 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temperature 1.0 0.9 0 0.7 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 = 250 µA ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73557. Document Number: 73557 S10-2139-Rev. C, 20-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1300BDL Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 360 ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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