NTMD4820NR2G ON Semiconductor, NTMD4820NR2G Datasheet - Page 4

• Manufacturer Part Number: NTMD4820NR2G
• Description: MOSFET N-CH DUAL 30V 8A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4820NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.01
1300
1200
1000
1100
100
0.1
100
900
800
700
600
500
400
300
200
100
10
10
1
0.1
1
0
1
0
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
V
I
V
C
D
C
GS
DD
GS
rss
= 1 A
= 25°C
V
= 20 V
C
= 10 V
= 15 V
DS
C
oss
Figure 9. Resistive Switching Time
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
iss
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5
Figure 7. Capacitance Variation
Variation vs. Gate Resistance
R
R
THERMAL LIMIT
PACKAGE LIMIT
G
DS(on)
, GATE RESISTANCE (OHMS)
Safe Operating Area
1
10
LIMIT
10
15
10
TYPICAL PERFORMANCE CURVES
20
T
V
J
25
GS
10 ms
100 ms
10 ms
= 25°C
dc
1 ms
http://onsemi.com
t
= 0 V
t
t
d(off)
t
d(on)
r
f
100
100
30
4
10
9
8
7
6
5
4
3
2
1
0
0
75
50
25
V
3
2
1
0
0.3
0
25
Q
Drain−To−Source Voltage vs. Total Charge
DS
GS
Figure 10. Diode Forward Voltage vs. Current
V
T
2
J
GS
Figure 12. Maximum Avalanche Energy vs.
= 25°C
V
T
J
SD
Figure 8. Gate−To−Source and
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
4
0.4
G
Starting Junction Temperature
50
, TOTAL GATE CHARGE (nC)
Q
GD
6
QT
0.5
75
8
10
0.6
100
12
V
I
T
D
GS
J
= 7.5 A
= 25°C
0.7
125
14
I
D
= 11 A
16
20
16
12
8
4
0
150
0.8