NTMD4820NR2G ON Semiconductor, NTMD4820NR2G Datasheet - Page 3

• Manufacturer Part Number: NTMD4820NR2G
• Description: MOSFET N-CH DUAL 30V 8A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4820NR2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 940pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12.5
0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
0.005
7.5
2.5
15
10
5
0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
3
Figure 3. On−Resistance vs. Gate−to−Source
V
0.5
I
V
DS
D
Figure 1. On−Region Characteristics
V
GS
4.5 V
= 7.5 A
−25
5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
4 V
3.8 V
Figure 5. On−Resistance Variation with
6 V
4
= 10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4.2 V
1.0
T
10V
J
, JUNCTION TEMPERATURE (°C)
0
5
1.5
25
Temperature
6
Voltage
2.0
T
J
= 25°C
50
2.5
7
2.8 V
75
TYPICAL PERFORMANCE CURVES
3.0
8
100
T
I
D
J
3.5
= 7.5 A
= 25°C
3.6 V
3.4 V
3.0 V
http://onsemi.com
3.2 V
9
125
4.0
150
10
3
100000
10000
0.030
0.025
0.020
0.015
0.010
0.005
1000
100
15
10
0
5
0
3
2
Figure 4. On−Resistance vs. Drain Current and
1
V
T
V
DS
J
Figure 6. Drain−to−Source Leakage Current
GS
= 25°C
6
V
V
≥ 10 V
1.5
DS
GS
= 0 V
Figure 2. Transfer Characteristics
4
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
9
I
D,
2
T
DRAIN CURRENT (AMPS)
12
J
6
T
= 25°C
Gate Voltage
J
= 125°C
T
vs. Voltage
2.5
V
V
15
T
J
GS
GS
J
= 150°C
= 100°C
8
= 4.5 V
= 10 V
18
3
21
10
T
3.5
J
= −55°C
24
12
4
27
4.5
30
14