NTMD4820NR2G ON Semiconductor, NTMD4820NR2G Datasheet
NTMD4820NR2G
Specifications of NTMD4820NR2G
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NTMD4820NR2G Summary of contents
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... J STG +150 I 2 EAS 60 260 °C L Device NTMD4820NR2G Symbol Max Unit R 97.5 †For information on tape and reel specifications, qJA including part orientation and tape sizes, please R 62 qJA refer to our Tape and Reel Packaging Specification °C/W Brochure, BRD8011/ qJF R 167 ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coeffi- cient Drain−to−Source On Resistance Forward Transconductance CHARGES, ...
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T = 25° 12 4 3.8 V 7 0.5 1.0 1.5 2.0 2 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...
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C iss 1000 900 800 700 600 500 C oss 400 300 200 C 100 rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...
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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...