BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 3

• Manufacturer Part Number: BSO303P H
• Description: MOSFET 2P-CH 30V 7A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2678pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 32.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode direct current, pulsed
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
SM
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
V
V
T
V
T
V
di
page 3
C
j
GS
DD
DD
GS
GS
R
=25 °C
F
=25 °C
=-15 V, I
/dt =100 A/µs
=0 V, V
=-15 V, V
=-24 V, I
=0 to 10 V
=0 V, I
D
=-1 A, R
F
DS
=-8.2 A,
F
=|I
D
=-25 V,
GS
=-8.2 A,
S
=-
G
|,
=6 Ω
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1785
typ.
510
425
-2.7
-0.9
-14
-36
11
13
55
39
24
13
-5
-
-
max.
-32.8
2678
BSO303P H
-2.2
-1.3
765
638
-20
-49
17
20
83
59
36
19
-6
-
Unit
pF
ns
nC
V
A
V
ns
nC
2010-02-10