BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 3
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BSO303P H
Manufacturer Part Number
BSO303P H
Description
MOSFET 2P-CH 30V 7A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO303P_H.pdf
(9 pages)
Specifications of BSO303P H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2678pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
21.0 mOhm
Rds (on) (max) (@4.5v)
32.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode direct current, pulsed
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
SM
rr
plateau
SD
iss
oss
rss
gs
gd
g
rr
V
f =1 MHz
V
10 V, I
V
V
T
V
T
V
di
page 3
C
j
GS
DD
DD
GS
GS
R
=25 °C
F
=25 °C
=-15 V, I
/dt =100 A/µs
=0 V, V
=-15 V, V
=-24 V, I
=0 to 10 V
=0 V, I
D
=-1 A, R
F
DS
=-8.2 A,
F
=|I
D
=-25 V,
GS
=-8.2 A,
S
=-
G
|,
=6 Ω
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1785
typ.
510
425
-2.7
-0.9
-14
-36
11
13
55
39
24
13
-5
-
-
max.
-32.8
2678
BSO303P H
-2.2
-1.3
765
638
-20
-49
17
20
83
59
36
19
-6
-
Unit
pF
ns
nC
V
A
V
ns
nC
2010-02-10